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Hic articulus describitur, qui ductum subiectum est maxima applicationem sapphiri, tum pelagus modos parare sapphirus crystallis, crescente sapphiri crystallis per CZropulski modum, crescente sapphirus per a ducto per modum, crescente sapphiri per auctum per modum, crescente sapphiri per auctum per auctum modum.

In articulus est temperatus gradiente in uno-crystal fornacem. Covers in static et dynamic calor agros per crystal incrementum, in solidum-liquidum interface, et temperatus gradiente in partes in solidificatione.

Et Taiko processum Triticum Silicon Wafers per suam principiis, technica commoda et processum origins.

VIII-inch sic epitaxial fornacem et homepitaxial processum investigationis

Articulus enucleat proprietates materiales semiconductoris laganae subiectae sicut silicon, GaAs, SiC et GaN.

Hoc articulum maxime describitur Gan-fundatur humilis-temperatus epitaxial technology, comprehendo crystal structuram de Gan-fundatur materiae, III. EPITAXIUS Technology Technology EPITAXIUS Technology, et Development Technology Technology