Gan-fundatur humilis-temperatus epitaxy technology

I. De momenti de Gan-secundum materiae

Gan-fundatur semiconductor materiae late in praeparatione optoelectronic cogitationes, potentia electronic cogitationes et radio frequency Proin cogitationes debitum ad optimum proprietatibus ut lata bandgap est, princeps naufragii. Hae cogitationes sunt late in industrias ut semiconductor lucting, solidum-re publica ultraviolet lux fontes, solaris photovoltaics, laser ostentationem, flexibilibus, etc., et technology et foro sunt magis mature.

Limitations of traditional EPITAXY Technology

Traditional epitaxial incrementum technologies pro gan-fundatur materiae utMocvdetMBEPlerumque requirere caliditas condiciones, quae non applicantur ad amorpho subiecta talis speculum et plastics quia haec materiae non sustinere superiore augmentum temperaturis. Exempli gratia, communiter solebant supernatet speculum et mollire sub condicionibus excedens DC ° c. Demand pro humilis-temperatusEPITAXY TechnologyEt augendae demanda humilis sumptus et flexibilia optoelectronic (electronic) cogitationes, ibi est postulatio epitaxial apparatu quod utitur externa electrica campus industria. Technology potest ferri ad humilis temperaturis, accommodatam ad characteres de Amorpho subiecta, providente possibilitate parat humilis sumptus et flexibile (optoelectronic) cogitationes.

II. Crystalli structuram de Gan-fundatur materiae

Crystal structuram type

GaN-based materials mainly include GaN, InN, AlN and their ternary and quaternary solid solutions, with three crystal structures of wurtzite, sphalerite and rock salt, among which the wurtzite structure is the most stable. Spherite structuram est metasable tempus, quod potest transformari in Wurtzite structuram ad altum temperatus, et potest esse in Wotzite structuram in forma stacking vitiis in inferioribus temperaturis. Et petram sal structuram est summus pressura tempus de Gan et non solum apparent per summa princeps pressura conditionibus.

Proprium crystallum plana crystal species

Commune crystallum plana includit Polar C-planum, semi-Polar s-planum, r-planum, n-planum, et non-polar a-planum et m planum. Plerumque, in Gan-fundatur tenuis films adeptus per epitaxy in sapphirus et si subiecta sunt C-planum cristallum orientations.

III. EPITAXY Technology Requisita et Exsequendam Solutions

Necessitas technological mutatio

Cum progressionem de informatization et intelligentia, in demanda ad optoelectronic cogitationes et electronic cogitationes tendit ut humilis-sumptus et flexibile. Ut in occursum his necessitates, necesse est mutare existentium epitaxial technology de Gan-fundatur materiae, praesertim ut develop epitaxial technology quod potest ferri ex ad humilis temperaturis ad aptet ad proprietates de amore.

Progressionem humilis-temperatus epitaxial technology

Humilis-temperatus epitaxial technology fundatur in principiisPhysica vapor depositione (PVD)etChemical vapor depositione (Cvd), Comprehendo Reactive Magnetron spundly, Plasma, Assisted MBE (PA-MBE), Pulsae Laser Deposition (PDL), Migratio Plasma CVD (PSD), Laser Plasma CVD (PSD), Laser Plasma CVD (PSD), Laser Plasma CVD (MEA-CVD), Longinquus CVD (MEA-CVD), Longinquus CVD (MEA-CVD), Longinquus CVD), Macvd Longin (Rpemocvd), operatio auctus Mucvd (Remocvd), Electron Cyclotron resonatur Plasma Enhanced Mucvd (ECR-Pemocvd) et inductive iungatur Plasma Mocvd (ICP, Mocvd), etc.

IV. Minimum-temperatus epitaxy technology secundum PVD principle

Technology types

Including reactive magnetron sputtering, plasma-assisted MBE (PA-MBE), pulsed laser deposition (PLD), pulsed sputtering deposition (PSD) and laser-assisted MBE (LMBE).

Technical features

Hae technologies providere industria per usura externa agro coupling ad ionize in reactionem source ad humilis temperatus, ita reducendo eius fregisset temperatus et consequi humilis-temperatus epitaxial incrementum et assequendum, secundum materiae. For example, reactive magnetron sputtering technology introduces a magnetic field during the sputtering process to increase the kinetic energy of electrons and increase the probability of collision with N2 and Ar to enhance target sputtering. Simul, potest etiam confiteri summus densitas plasma super scopum et reducere bombardment of ions in subiecto.

Challenges

Licet progressionem harum technologiae fecit possibile parare humilis-sumptus et flexibilia optoelectronic cogitationes, etiam faciem challenges in terms of incrementum qualitas, apparatu complexionem et sumptus. For example, PVD technology usually requires a high vacuum degree, which can effectively suppress pre-reaction and introduce some in-situ monitoring equipment that must work under high vacuum (such as RHEED, Langmuir probe, etc.), but it increases the difficulty of large-area uniform deposition, and the operation and maintenance cost of high vacuum is high.

V. Humilis-temperatus epitaxial technology fundatur in CVD principium

Technology types

Including remote plasma CVD (RPCVD), migration enhanced afterglow CVD (MEA-CVD), remote plasma enhanced MOCVD (RPEMOCVD), activity enhanced MOCVD (REMOCVD), electron cyclotron resonance plasma enhanced MOCVD (ECR-PEMOCVD) and inductively coupled plasma Mucvd (ICP, Mocvd).

Technical commoda

Hae technologies consequi incrementum III-nitride semiconductor materiae ut Gan et inn ad inferioribus temperaturis per usura diversis plasma fontes et reactionem machinationes, quae est conducere ad magnum-area uniformis depositione et sumptus reductionem. Nam, remotis Plasma CVD (RPCVD) Technology utitur per ERCR Source ut a Plasma generans, quae est humilis-pressura Pure-generator generant, quod potest generate summus density plasma. In eodem tempore, per Plasma Luminence Spectroscopy (Oes) Technology, in CCCXCI NM spectrum consociata cum N2 + fere in super subiecto, ita reducendo bombinform of super superficiem a summo reducing ad bombinform of super superficiem a summo reducing a bombinform of super superficiem a summo-navitas ions.

Amplio crystal species

Et crystal qualis est epitaxial layer est melius efficaciter filtering summus industria praecepit particulas. Exempli gratia, mea-cvd technology utitur HCP Source reponere ad ECR Plasma Source of RPCVD, faciens illud magis idoneam ad generating summus density Plasma. Et utilitas de HCP Source est quod non est oxygeni contaminationem fecit per Quartz Dielectric fenestra, quod habet altiorem plasma density quam capacitive coupling (CCP) Plasma.

VI. Summary et Outlook

In current status humilis-temperatus EPITAXY Technology

Per litterarum investigationis et analysis, in current statum humilis-temperatus epitaxy technology est outlined, comprehendo technica characteres, apparatu structuram, operantes conditionibus et experimentalem results. Hae technologies providere industria per externum agro cooptos efficaciter reducere augmentum temperatus aptet ad characteres de Amorpho, et providere facultatem parat humilis-sumptus et flexibilia (opto) electronic cogitationes.

Future Research directiones

Minimum-temperatus epitaxy technology habet lata application spes, sed adhuc in exploratory scaena. Eam requirit in-profundum investigationis ex utroque apparatu et processus facies solvere problems in ipsum applications. Exempli gratia, necesse est adhuc studium quam ad consequi altiorem density plasma dum considerans Ion filtering forsit in Plasma; Quam ad consilio structuram gas homogenization fabrica efficaciter supprimere pre-reactionem in cavitatis humilis temperaturis; Quam ad excogitandum calefacientis de humilis-temperatus epitaxial apparatu vitare sparking vel electrox agrorum afficiens plasma ad specifica cavum pressura.

CONLECTATIO

Expectatur quod ager erit in potentiale progressionem directionem et fac momenti contributions ad progressionem de generation de optoelectronic cogitationes. Cum acer operam et strenuus promotionem inquisitores, hoc agro erit crescere in potentiale progressionem directionem in futurum et ut magna contributions ad progressionem de generatione altera (optoelectronic) cogitationes.