4h semi insulating type sic substratum

Sic laga ludit plures key roles in semiconductor processus processus. Combined cum suis excelsum resistentivity, princeps scelerisque conductivity, lata bandgap et aliis proprietatibus, quod late in altum frequency, summus potentia et summus temperatus agros, praesertim in Proin et RF Applications. Est necessaria component productum in semiconductor vestibulum processus.

Pelagus

I. Excellent electrica proprietatibus

High Critical Breakdown Electric agro (circiter III MV / cm) De X temporibus altius quam Silicon, potest sustinere altiorem intentionem et tenuior PERFLUO Design, significantly reducere super-resistentia, idoneus est altius intentione et tenuior, idoneam ad altum voltage potentia cogitationes.

Semi-insulating proprietatibus: High resistentia (> X ^ V Ω · cm) per Vanadium doping aut intrinseca defectus ultricies, idoneam ad altum frequency, humilis damnum rf cogitationes (ut tollat.

II. Thermal et eget stabilitatem

High scelerisque conductivity (4.9w / cm · K): optimum calor dissipatio perficientur, suscipio summus temperatus opus (theoretical opus temperatus potest pervenire CC ℃ vel magis), reducere ratio calidum solutam requisita.

Chemical inertness, inerti maxime acida et alkalis, fortis corrosio resistentia, idoneam dura elit.

III. Material structuram et crystal species

4H PolyTyspic structuram: Hexagonal structuram praebet altius electa mobilitatem (E.G., Longitudinal Electron Mobility de MCXL cm² / V · s), quod est superior aliis PolyThyspic (E.G. 6H-SIC) et idoneam ad altum frequency cogitationes.

Quality epitaxial incrementum: humilis defectus density heteroxial films (ut epitaxial layers in aln / si compositum subiecta) potest effectum per CVD (eget vapor depositione) technology, improving fabrica reliability.

IV. Processus compatibility

Compatible cum Silicon Processus: Sio₂ Stuulation Layer potest formari per scelerisque oxidatio, quod est facile ad integrate Silicon-fundatur processus cogitationes ut Mosfet.

Ohmic Contact Optimization: usum multi-layer metallum (ut ni / TI / PT) Alloying processus, reducere in contactu resistentia (ut ni / si / al stromance contactu, ut humilis ut 1.3 × X ^ -4 Ω ·), amplio fabrica perficientur.

V. Application missionibus

Power Electronics: Used Ad Eufragure High-Voltage Schotty Diodes (SBD), IGBT Modules, etc., supporting altum switching frequentiis et humilis damnum.

RF cogitationes: idoneam 5G communicationis basi stationibus, radar et alium summus frequency missionibus, ut algan / gan fixum cogitationes.

Vetek Semiconductor constanter sequi altius crystal qualitas et processui qualis est occursum mos needs.currently,IV-inchetVI-inchproducts sunt available etVIII-inchProducts sunt sub development. 

Semi-insulating sic substratum basic productum specifications:

Semi-insulating sic substratum crystal qualis specifications:

4h semi insulating genus sic substratum deprehendatur modum et terminology: