MOCVD epitaxial wafer susceptor

Mucvd Epitaxial Wafer susceptator est summus perficientur epitaxial laganum susceptos disposito Mucvd (metallum-organicum eget vapor depositione) apparatu. The susceptor is made of SGL graphite material and coated with silicon carbide coating, which combines the high thermal conductivity of graphite with the excellent high temperature and corrosion resistance of SiC, and is suitable for the harsh working environment of high temperature, high pressure and corrosive gas during the epitaxial growth of semiconductors.

SGL graphite materia habet optimum scelerisque conductivity, quod ensures quod temperatus de epitaxial lagam est aequaliter distribui in incrementum processus et amplio qualis est epitaxial iacuit. Tarraing sic coating enables susceptos sustinere altum temperaturis magis MDC ℃ et aptet ad extremum scelerisque elit in Mocvd processus. Praeterea, in sicco potest efficaciter resistere summus temperatus reactionem gasorum et eget corrosio, extend ad officium vitae susceptos et redigere pollutio.

Veteksemi scriptor mocvd epitaxial laganum susceptos potest esse ut tortor pro accessiones de Mucvd apparatu amet ut aixtron.

● magnitudine: Potest customized secundum mos necessitates (vexillum mole available).

● portantes facultatemPotest portare plures vel plus quam L epitaxial wafers ad tempus (fretus ad susceptos magnitudine).

● superficiem curatio: Sic coating, corrosio resistentia, oxidatio resistentia.

● siconductor industria: Usus est ad incrementum epitaxial lagana ut leds, laser Diodes et potentia semiconductors.

● optoelectronics industria: Sustinet epitaxial incrementum summus qualitas optoelectronic cogitationes.

● High-finis Material Research et Development: Applied ad epitaxial praeparatio novum semiconductors et optoelectronic materiae.

Fretus in Lorem scriptor Mucvd Equipment Type et productionem necessitatibus, Vetek Semiconductor praebet customized servicia, comprehendo susceptos magnitudine, materia, superficiem curatio, etc., ut maxime idoneum solutio est provisum est ut ad hoc quod maxime idoneum solutio est provisum est.

Cvd sic amet crystal structure

Basic physica proprietatibus CVD sic coating

Et semiconductor Mucvd epitaxial laganum susceptator shops