Tres-petal Graphite Crucible

Vetek Semiconductor est tria-petal Graphite Crucible disposito pro incrementum processus of Monocrystalline Silicon by CZ methodo, in tres-petal structuram graphite crustae est ex Isostatic princeps puritatem graphite materia. Through the innovative three-petal structure, the traditional integrated crucible can effectively solve the disassembly difficulties, thermal stress concentration and other industry pain points, and is widely used in photovoltaic silicon wafers, semiconductor wafers and other high-end manufacturing fields.

Core Processus ornare ipsum

I. Ultra-praecisione GRAPHITE processus technology

Material puritas: usum isostatic pressed graphite subiectum cum cinis contentus <5ppm si requiritur et plerumque <10ppm ut nulla pollutio in Silicon liquescens processum

Structural CONSILIUM: Postquam Graphitized MMCC ℃, flectens vires est ≥45mpa et coefficiens scelerisque expansion est ≤4.6 × 10⁻⁶ / ℃

Superficiem curatio: 10-15μm pyrolytic carbonis coating deposita CVD processus ad amplio oxidatio resistentia (pondus damnum <1.5%/100h@1600℃).

II. Innovative Tres-Polio structuram Design

Modular Conventus: CXX ° Equipartition Tres-Lobe structuram, installation et disassembly efficientiam auctus per CCC%

Suspendisse Release Design: De Split structuram efficacius dispersiones ad scelerisque expansion accentus et extendit ministerium vitae plus quam CC cycles

Certe fit, gap inter valvulae sit <0.1mm et altum caliditas Ceramic tenaces ensures nulla lacus in Silicon liquescens processum

III. Nativus processus officia processus

Support ib16 "-Φ40" plena-amplitudo Aliquam, murum crassitudine tolerantia imperium ± 0.5mm

In gradiente density structuram 1.83g / CM³ potest electus ad optimize ad scelerisque agro distribution

Providere valorem, addidit processus ut boron nitride compositum coating et Rhenum metallum Edge confirmans

Typical application missione

Industria photovoltaic

Monocrystalline Silicon rod continuum drawing: idoneam ad G12 magnam magnitudinem Silicon lacus productio, auxilium ≥500kg loading facultatem

N-Type TopCon Pugna: Ultra-Minimum Migration Minoritas Vita Minoritas Migratio> 2ms

Thermal Field upgrading: compatible cum amet unum crystal fornacem Models (Pvi, Ferrotec, etc)

Semiconductor vestibulum

8-12 inch semiconductor-gradu Monocrystalline Silicon augmentum: occursum semi vexillum classis, X munditia requisitis

Special Doped Crystals: Crimice Imperium Boron / phosphoro distribution uniformitatem

Tertio generatione semiconductor: compatible sic una crystal praeparatio processus

Field scientific

Research et progressionem de ultra-tenuis siliconna wafers ad spatium solaris cellulis

Augmentum Test De Nova Crystal Materials (Germanium, Gallium Arsenide)

Limit Parameter Research (MMM ℃ Ultra-High Temperature liquescit Experimentum)

Quality Fides ratio

ISO 9001/14001 Dual Ratio Certification

Providere Material Test Report pro Customers (Missa Compositione Analysis, Sem microscucture)

Totum processus Taceability System (Laser Marking + Blockchain repono)