Products
GaN on SiC epi susceptor
  • GaN on SiC epi susceptorGaN on SiC epi susceptor

GaN on SiC epi susceptor

Gan in Sic epi susceptator ludit a vitalis munus in semiconductor processus per eius optimum scelerisque conductivity, summus temperatus processus facultatem et eget stabilitatem, et ensures altum efficientiam et materiam qualis est gan epitaxial incrementum processus. Vetek Semiconductor est Sina professional opificem de Gan in Sic epi susceptator, ut sincere expectamus tuum porro consultationem.

Ut professionalsemiconductor manufacturerIn Sina,Et semiconductor Gan in SIC epi susceptorEst key component in praeparatione processumGan in SICcogitationesEt ejus perficientur directe afficit qualis est epitaxial layer. Cum lateque applicationem in Gan in siccitatibus in potentia electronics, RF cogitationes et aliis agris, in requisita proSiC epi susceptoret facti altius et altior. Nos focus in providente ultima technology et uber solutions ad semiconductor industria, et suscipit tuum consultationem.


Plerumque, in roles Gan in Sic epi susceptator in semiconductor processus sunt ut sequenti:

Illustration of epitaxial structures of GaN on SiC


● High Temperature Processing Capability: Gan in Sic epi susceptator (Gan in Silicon carbide epitaxial incrementum orbis) maxime usus est in Gallium Nitride (Games) Epitaxial incrementum processus, praesertim in altum caliditas environments. Hoc epitaxial incrementum orbis potest sustinere maxime princeps processus temperaturis, plerumque inter M ° C et MD ° C, faciens idoneam ad epitaxial incrementum gan materiae et processui Silicon carbide (sic) subiecta.


● optimum scelerisque conductivity: Sic epi susceptator necessitates habere bonum scelerisque conductivity ad aequaliter transferre ad calorem generatae per calefacit fontem in sic substrat, ut temperatus uniformitatem in incrementum processus. Silicon carbide habet maxime princeps scelerisque conductivity (de 120-150 w / MK), et Gan in sic epitaxy susceptator non mores calor magis efficacius quam traditional materiae ut Silicon. Hoc pluma est crucial in Gallium Nitride epitaxial incrementum processus, quod iuvat ponere temperatus uniformitatem subiecti, ita improving qualis et constantia de film.


● ne pollutioEt materiae et superficiem curatio processus of Gan in Sic epi susceptator esse poterit ne pollutio in incrementum environment et vitare introductio impudicitiis in epitaxial iacuit.


Ut professionalis manufacturerGan in SIC epi susceptor, Porae GraphiteetTac coating laminamIn Sina, Vetek Semiconductor semper instat in providing customized uber officia, et committitur ad providing industria cum top technology et uber solutions. Nos sincere expectamus ad consultationem et cooperante.


CVD sic coating film crystal structure

CVD SIC COATING FILM CRYSTAL STRUCTURE


Basic physica proprietatibus CVD sic coating


Basic physica proprietatibus CVD sic coating
Coating proprietas
Typical valorem
Crystal structure
FCC β tempus Polycrystalline, maxime (CXI) Oriented
CVD sic coating density
3,21 G / CM³
Durities
MMD Vickers Duritia (500g Load)
Frumea magnitudine
II ~ 10mm
Chemical castitas
99,99995%
Calor
DCXL J · k-1· K-1
Sublimation Temperatus
MMDCC ℃
Flacalis fortitudinem
CDXV MPA Rt IV-Point
Young 's modulo
CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity
300W · M-1· K-1
Thermal Expansion (CTE)
4.5 × X-6K-1

Et semiconductor Gan in SIC epi susceptator productio shops

GaN on SiC epi susceptor production shops


Hot Tags: GaN on SiC epi susceptor
Mitte Inquisitionem
Contactus info
Percontationes de Silicon Carbide Coating, Tantalum Carbide Coating, Graphite speciale vel indicem pretiosum, electronicam tuam nobis relinque et intra 24 horas erimus.
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept