Focus anulus pro Etching est key component ut processus accuracy et stabilitatem. Haec components sunt pressius convenerunt in vacuo aethereum ad consequi uniformis machining de Nanoscale structurae in laganum superficiem per praecisam imperium de Plasma distribution, ora temperatus et electrica agri uniformitatem.
Monocrystalline Silicon Etching Annulorum sunt essentiales components in semiconductor etching processus per maintaining plasma environment stabilitatem, protegens apparatu et wafers, optimizing resource utendo et accommodando ad processis elit. Et perficientur directe afficit cede et sumptus of chip vestibulum.
In anulum et sicched, electrode etc (ora temperatus moderatoris) sunt core consumables ut plasma uniformitatem, temperatus imperium et processum repeatability. Haec components sunt pressius convenerunt in vacuo camera CVD, etching et film apparatu et directe determinare accurate et cede de etching a extremis ad centrum de lagestre.
In responsio ad restrictius demanda ad materiam proprietatibus in altus-finem vestibulum processus, Veteksemi innovates per altus-puritas Monocrystalline Silicon cum resistentibus 10-20ω · cm ad fabricare focusing annulos et supporting consumables. Per collaborative optimization de materia scientia, electrica consilio et thermodynamics, Veteksemi potest fabricare focusing annulos et supporting consumables. Comprehendendo excedunt traditional quartz solutions ad consequi breakthrough meliminationes in Vivacitas, accurate et cost efficaciam.
Core Material Comparison et Resistentia Optimization
Vita 5000-8000 wafers (fluorine / CHLORUM secundum processum)
Vita span 1500-2000 wafers
Scelerisque conductivity
CXLIX w / m K (calor defluxit dissipationem, Δt fluctuation ± II ℃)
1.4W / M · K (Δt fluctuation ± X ℃)
Coefficientem scelerisque expansion
2.6 × 10⁻⁶ / K (Wafer matched, nulla deformatio)
0,55 × 10⁻⁶ / K (Biblia Displacement)
Differtur Differt
Tanδ <0.001 (accurate Electric agro Control)
Tanδ ~ 0.0001 (Electric agro distortione)
AGRESSUS
Ra <0.1μm (Class X munditia Latin)
Ra <0.5μm (High particula periculo)
Product Core advantage
I. ATOMIC ALTUS DOMITATEM SACRACY
Resistentia Optimization + ultra-praecisione Polising (Ra <0.1μM) Excluditur Micro-missionem et particula contagione in occursum semi F47 signa.
In Dielectric damnum (Tanδ <0.001) est valde matched ad laganum Dielectric environment, avoiding Edge Electric agro distorting et supporting 3D NANT 89.5 ° ± 0.3 ° vertical profunda etching.
II. Intelligentes ratio compatibility
Integrated cum etc. Edge temperatus imperium modulus, in refrigerationem aer fluxus est dynamically adaequatum per Thermocouple et Ai algorithm ad compensare cubiculum scelerisque.
Support customized RF matching network, idoneam ad amet machinis ut Amat Centura, Lam Research Kiyo et ICP / CCP plasma fontibus.
III. Comprehensive sumptus-efficaciam
De Vita Monocrystalline Silicon est CCLXXV% diutius quam quod de quartz, in victum cycle plus quam 3,000 horas et comprehensive sumptus dominium (TCO) reducitur per XXX%.
Customization resistentivity CLUSTER Service (5-100Ω · cm), pressius matching Lorem processus fenestra (ut Gan / sic wide cohortem gap materia etching).
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