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Focus anulum in Etching
  • Focus anulum in EtchingFocus anulum in Etching
  • Focus anulum in EtchingFocus anulum in Etching

Focus anulum in Etching

Focus Annulorum in Etching sunt clavem component ut processus accurate et stabilitatem. Haec components sunt pressius convenerunt in vacuo aethereum ad consequi uniformis machining de Nanoscale structurae in laganum superficiem per praecisam imperium de Plasma distribution, ora temperatus et electrica agri uniformitatem.

Monocrystalline Silicon Etching Annulorum sunt essentiales components in semiconductor etching processus per maintaining plasma environment stabilitatem, protegens apparatu et wafers, optimizing resource utendo et accommodando ad processis elit. Et perficientur directe afficit cede et sumptus of chip vestibulum.


In anulum et sicched, electrode etc (ora temperatus moderatoris) sunt core consumables ut plasma uniformitatem, temperatus imperium et processum repeatability. Haec components sunt pressius convenerunt in vacuo camera CVD, etching et film apparatu et directe determinare accurate et cede de etching a extremis ad centrum de lagestre.


In responsio ad restrictius demanda ad materiam proprietatibus in altus-finem vestibulum processus, Veteksemi innovates per altus-puritas Monocrystalline Silicon cum resistentibus 10-20ω · cm ad fabricare focusing annulos et supporting consumables. Per collaborative optimization de materia scientia, electrica consilio et thermodynamics, Veteksemi potest fabricare focusing annulos et supporting consumables. Comprehendendo excedunt traditional quartz solutions ad consequi breakthrough meliminationes in Vivacitas, accurate et cost efficaciam.


Focus ring for etching diagram


Core Material Comparison et Resistentia Optimization

Monocrystalline Silicon vs. Quartz


Project
Monocrystalline Silicon focusing circulum (10-20 ω · cm)
Quartz focusing circulum
Resistentia ad Plasma Corrosion
Vita 5000-8000 wafers (fluorine / CHLORUM secundum processum)
Vita Span 1500-2000 Wafers
Scelerisque conductivity
CXLIX w / m K (calor defluxit dissipationem, Δt fluctuation ± II ℃)
1.4W / M · K (Δt fluctuation ± X ℃)
Coefficientem scelerisque expansion
2.6 × 10⁻⁶ / K (Wafer matched, nulla deformatio)
0,55 × 10⁻⁶ / K (Biblia Displacement)
Differtur Differt
Tanδ <0.001 (accurate Electric agro Control)
Tanδ ~ 0.0001 (Electric agro distortione)
AGRESSUS
Ra <0.1μm (Class X munditia Latin)
Ra <0.5μm (High particula periculo)


Product Core advantage


I. ATOMIC ALTUS DOMITATEM SACRACY

Resistentia Optimization + ultra-praecisione Polising (Ra <0.1μM) Excluditur Micro-missionem et particula contagione in occursum semi F47 signa.

In Dielectric damnum (Tanδ <0.001) est valde matched ad laganum Dielectric environment, avoiding Edge Electric agro distorting et supporting 3D NANT 89.5 ° ± 0.3 ° vertical profunda etching.


II. Intelligentes ratio compatibility

Integrated cum etc. Edge temperatus imperium modulus, in refrigerationem aer fluxus est dynamically adaequatum per Thermocouple et Ai algorithm ad compensare cubiculum scelerisque.

Support customized RF matching network, idoneam ad amet machinis ut Amat Centura, Lam Research Kiyo et ICP / CCP plasma fontibus.


III. Comprehensive sumptus-efficaciam

De Vita Monocrystalline Silicon est CCLXXV% diutius quam quod de quartz, in victum cycle plus quam 3,000 horas et comprehensive sumptus dominium (TCO) reducitur per XXX%.

Customization resistentivity CLUSTER Service (5-100Ω · cm), pressius matching Lorem processus fenestra (ut Gan / sic wide cohortem gap materia etching).


Ad effectum resistentibus


Project
Monocrystalline Silicon focusing circulum (10-20 ω · cm)
High Resistance Monocrystalline Silicon (> L Ω · cm)
Quartz focusing circulum
Pudicitia
> 99,9999%
> 99,9999%
> 99.99%
Corrosion vitae (Wafer comitem)
5000-8000
3000-5000
1500-2000
Thermal inpulsa stabilitatem
Δt> D ℃ / s
Δt> CCC ℃ / s
Δt
Leakage current density

/ /
Lagana cede augetur
+ 1.2% ~ 1.8%
+ 0.3% 0.7%
Basis valorem

Product Commercial Termini


Minimum ordinem quantitas
I Set
Pricio
Contactus ad customized quotation
Packaging Details
Latin Export Package
Delivery Tempus
Delivery Tempus: 30-35 diebus post ordinem confirmationis
Terms
T / T
Supple
DC Sets / mensis


Focus ring for etching working diagram

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Percontationes de Silicon Carbide Coating, Tantalum Carbide Coating, Graphite speciale vel indicem pretiosum, electronicam tuam nobis relinque et intra 24 horas erimus.
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