VeTek Semiconductor principalis Rapid Thermal Annealing Susceptoris fabrica et supplementum in Sinis est, positus in solutiones pro semiconductoris industriae altae faciendo solutiones. Multos annos altae technicae cumulus in agro materiae SiC efficiens habemus. Our Rapid Thermal Annealing Susceptor has excellent high temperature resist and excellent thermal conductivity to meet the needs of a laganum epitaxial vestibulum. Gratum est quod officinas nostras in Sinis visitare ut plura de nostris technologia et fructibus discant.
Vetek semiconductor celeri scelerisque annealing susceptator est cum alta qualis et longa vita, grata est inquisitionis nobis.
In celeri scelerisque Anneal (RTA) est crucial subset de celeri scelerisque processus in semiconductor fabrica fabrication. Hoc involves calefacit singularum unda ad mutare eorum electrica proprietatibus per varios targeted calor treatments. Et RTA processu dat activation Dopants, alteratione film-ut-film aut film-ut-laganum substrati interfaces, densificatio deposita films, immutatio dampnum Dopant vel in laganum subiectum.
VeTek semiconductor productum, celeri Thermal Annealing Susceptor, agit munus vitalis in RTP processu. Construitur utens alta materia puritatis graphite cum tutela carbide pii inertis vestimento (SiC). Silicon SiC iactaret subiectum temperaturae usque ad 1100°C sustinere potest, certas observantias etiam sub extrema condicione procurans. SiC coating praestantem tutelam contra gas lacus et particulam effusionem praebet, longitudinis fructus procurans.
Ad ponendum praecise temperatus imperium, chip est encapsulated inter duas summus puritas graphite components iactaret cum Sic. Accurate temperatus mensuras potest adeptus per integrated summus temperatus sensoriis et thermocoples in contactu cum subiecto.
Basicae physicae proprietates CVD SiC efficiens:
Basic physica proprietatibus CVD sic coating
Res
Typical Value
Crystal Structure
FCC β Phase polycrystallina, maxime (111) ordinatur
Densitas
3,21 G / CM³
Durities
MMD Vickers duritiem 500g onus
Frumenti amplitudo
II ~ 10mm
Chemical castitas
99,99995%
Calor
DCXL J · k-1· K-1
Sublimatio Temperature
MMDCC ℃
Flexurae Fortitudo
CDXV MPA Rt IV-Point
Young 's modulo
CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity
300W · M-1· K-1
Scelerisque Expansion (CTE)
4.5 × X-6K-1
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